APT45GR65BSCD10
Microsemi Corporation
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
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APT45GR65BSCD10
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Product details
The APT45GR65BSCD10 from Microsemi Corporation is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the APT45GR65BSCD10 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the APT45GR65BSCD10 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 118 A
- Current - Collector Pulsed (Icm): 224 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
- Power - Max: 543 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 203 nC
- Td (on/off) @ 25°C: 15ns/100ns
- Test Condition: 433V, 45A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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