JAN1N6109US
Microsemi Corporation
Microsemi Corporation
TVS DIODE 9.9VWM 19.11VC SQ-MELF
$15.68
Available to order
Reference Price (USD)
1+
$15.67500
500+
$15.51825
1000+
$15.3615
1500+
$15.20475
2000+
$15.048
2500+
$14.89125
Exquisite packaging
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JAN1N6109US
$15.68
Product details
Enhance your circuit protection strategy with the JAN1N6109US TVS diode from Microsemi Corporation. This advanced diode is designed to mitigate the risks posed by voltage transients and surges, providing a reliable shield for your electronics. With its high surge current capacity and low clamping voltage, the JAN1N6109US ensures optimal performance in challenging environments. It is widely used in automotive, aerospace, and renewable energy systems. The diode's compact form factor and ease of integration make it a favorite among designers. Key advantages include superior thermal management, low leakage, and high durability. For applications requiring robust protection, the JAN1N6109US is an unbeatable solution. Ready to upgrade your protection? Request a quote today and experience the difference.
General specs
- Product Status: Active
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 9.9V
- Voltage - Breakdown (Min): 11.73V
- Voltage - Clamping (Max) @ Ipp: 19.11V
- Current - Peak Pulse (10/1000µs): 26.13A
- Power - Peak Pulse: 500W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
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