MWT-LN600
Microwave Technology Inc.
Microwave Technology Inc.
26 GHZ SUPER LOW NOISE PHEMT
$37.64
Available to order
Reference Price (USD)
1+
$37.64000
500+
$37.2636
1000+
$36.8872
1500+
$36.5108
2000+
$36.1344
2500+
$35.758
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DHL / Fedex / UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Microwave Technology Inc. MWT-LN600 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
Product details
Discover the MWT-LN600 RF MOSFET transistor from Microwave Technology Inc., a high-efficiency solution for discrete semiconductor products. This transistor is optimized for RF applications, providing excellent amplification and signal integrity. Its advanced FET technology ensures low noise and high gain, essential for precision electronics. The MWT-LN600 is designed to handle high power levels while maintaining thermal efficiency. With superior linearity and switching speed, it is ideal for high-frequency circuits. The transistor's robust construction ensures reliability in challenging environments. Its compact design allows for flexible integration into various electronic systems. The MWT-LN600 is perfect for applications requiring stable and efficient RF performance. Key advantages include minimal signal loss, high impedance matching, and excellent thermal management. These features make it suitable for use in wireless base stations, satellite receivers, and defense communication systems. It is also well-suited for consumer electronics, automotive infotainment, and industrial control systems. The MWT-LN600 delivers consistent performance across a wide range of frequencies. Microwave Technology Inc. has crafted this MOSFET to meet the highest industry benchmarks. For superior RF functionality, the MWT-LN600 is an outstanding choice. Upgrade your electronic designs with this high-quality transistor. Request a quote or submit an inquiry online to get started. Trust the MWT-LN600 from Microwave Technology Inc. for all your RF needs.
General specs
- Product Status: Active
- Transistor Type: pHEMT FET
- Frequency: 26GHz
- Gain: 12dB
- Voltage - Test: 3 V
- Current Rating (Amps): -
- Noise Figure: 0.5dB @ 12GHz
- Current - Test: 100 mA
- Power - Output: 20dBm
- Voltage - Rated: 5.5 V
- Package / Case: Die
- Supplier Device Package: Die