MWT-PH29F
Microwave Technology Inc.
Microwave Technology Inc.
TRANS ALGAAS/INGAAS PHEMT
$16.80
Available to order
Reference Price (USD)
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$16.80000
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$16.632
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$16.464
1500+
$16.296
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$16.128
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$15.96
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MWT-PH29F
$16.80
Product details
Upgrade your RF systems with the MWT-PH29F RF MOSFET transistor from Microwave Technology Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The MWT-PH29F offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the MWT-PH29F ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The MWT-PH29F ensures accurate and stable signal processing in all scenarios. Microwave Technology Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the MWT-PH29F is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the MWT-PH29F from Microwave Technology Inc. for superior RF performance.
General specs
- Product Status: Active
- Transistor Type: pHEMT FET
- Frequency: 26GHz
- Gain: 11dB
- Voltage - Test: 3 V
- Current Rating (Amps): 330mA
- Noise Figure: -
- Current - Test: 1 mA
- Power - Output: -
- Voltage - Rated: -
- Package / Case: Die
- Supplier Device Package: Chip
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