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BCP56-16,115

Nexperia USA Inc.
BCP56-16,115 Preview
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
$0.48
Available to order
Reference Price (USD)
1,000+
$0.11250
2,000+
$0.10250
5,000+
$0.09750
10,000+
$0.09000
25,000+
$0.08500
50,000+
$0.08250
Exquisite packaging
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EMS 3-7 days

Nexperia USA Inc. BCP56-16,115 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BCP56-16,115

BCP56-16,115

$0.48

Product details

Optimize your circuit performance with the BCP56-16,115, a precision Bipolar Junction Transistor from Nexperia USA Inc.. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The BCP56-16,115 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Nexperia USA Inc. employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The BCP56-16,115 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 960 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223

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