BSP19,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 350V 0.1A SOT223
$0.62
Available to order
Reference Price (USD)
1,000+
$0.23010
2,000+
$0.21240
5,000+
$0.20060
10,000+
$0.19470
Exquisite packaging
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BSP19,115
$0.62
Product details
Optimize your circuit performance with the BSP19,115, a precision Bipolar Junction Transistor from Nexperia USA Inc.. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The BSP19,115 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Nexperia USA Inc. employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The BSP19,115 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 1.2 W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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