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PBSS4140DPN/DG/B2,115

Nexperia USA Inc.
PBSS4140DPN/DG/B2,115 Preview
Nexperia USA Inc.
NEXPERIA PBSS4140DPN - 40 V LOW
$0.27
Available to order
Reference Price (USD)
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500+
$0.2673
1000+
$0.2646
1500+
$0.2619
2000+
$0.2592
2500+
$0.2565
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Nexperia USA Inc. PBSS4140DPN/DG/B2,115 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PBSS4140DPN/DG/B2,115

PBSS4140DPN/DG/B2,115

$0.27

Product details

Upgrade your electronic designs with the PBSS4140DPN/DG/B2,115, a high-reliability Bipolar Junction Transistor from Nexperia USA Inc.. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The PBSS4140DPN/DG/B2,115 demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Nexperia USA Inc. subjects each PBSS4140DPN/DG/B2,115 unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the PBSS4140DPN/DG/B2,115 delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.

General specs

  • Product Status: Active
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -

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