PBSS4260PANP,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN/PNP 60V 2A 6HUSON
$0.56
Available to order
Reference Price (USD)
3,000+
$0.17019
6,000+
$0.15921
15,000+
$0.15372
Exquisite packaging
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Nexperia USA Inc. PBSS4260PANP,115 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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PBSS4260PANP,115
$0.56
Product details
The PBSS4260PANP,115 from Nexperia USA Inc. is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision electronic applications. This product is part of the Discrete Semiconductor Products category, specifically optimized for circuits requiring multiple transistors in a compact package. Ideal for both industrial and commercial use, it ensures reliable performance and enhanced efficiency. The PBSS4260PANP,115 features excellent thermal stability and low noise operation, making it suitable for sensitive electronic environments. Its robust construction guarantees durability even in demanding conditions. With its advanced design, this BJT Array offers seamless integration into various circuit designs. Whether you're designing amplifiers, switches, or signal processors, the PBSS4260PANP,115 delivers consistent results. Its versatility extends to both analog and digital applications, providing flexibility for engineers. The product's compact form factor saves valuable board space without compromising performance. Trust Nexperia USA Inc.'s expertise in semiconductor technology for your next project. Applications include audio amplification systems, power management modules, and sensor interfaces. For automotive electronics, it ensures reliable operation under varying temperatures. In consumer electronics, it enhances device performance and longevity. Industrial automation systems benefit from its high-speed switching capabilities. To get started with the PBSS4260PANP,115, submit an online inquiry today for pricing and availability.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 90mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
- Power - Max: 510mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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