PBSS4260QAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 60V 2A DFN1010D-3
$0.37
Available to order
Reference Price (USD)
5,000+
$0.10160
10,000+
$0.09378
25,000+
$0.08857
50,000+
$0.08597
Exquisite packaging
Discount
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| EMS | 3-7 days |
Nexperia USA Inc. PBSS4260QAZ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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PBSS4260QAZ
$0.37
Product details
The PBSS4260QAZ by Nexperia USA Inc. sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The PBSS4260QAZ commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. Nexperia USA Inc.'s commitment to innovation is evident in the PBSS4260QAZ's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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