PMBT2222AMBYL
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 40V 0.6A DFN1006B-3
$0.04
Available to order
Reference Price (USD)
10,000+
$0.04452
30,000+
$0.04221
50,000+
$0.03990
100,000+
$0.03597
250,000+
$0.03528
Exquisite packaging
Discount
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PMBT2222AMBYL
$0.04
Product details
Discover the PMBT2222AMBYL, a high-efficiency Bipolar Junction Transistor from Nexperia USA Inc. designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The PMBT2222AMBYL demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the PMBT2222AMBYL simplifies circuit design challenges. Nexperia USA Inc.'s commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 340MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: DFN1006B-3
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