PRMH13Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V DFN1412-6
$0.37
Available to order
Reference Price (USD)
5,000+
$0.05635
10,000+
$0.04876
25,000+
$0.04623
50,000+
$0.04370
125,000+
$0.03864
Exquisite packaging
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PRMH13Z
$0.37
Product details
The PRMH13Z by Nexperia USA Inc. is a state-of-the-art pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products line under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is crafted to meet the demands of advanced electronic applications, offering high efficiency and dependability. The PRMH13Z features integrated pre-biasing, which optimizes circuit design and reduces component count. Its superior thermal performance ensures reliable operation in varying conditions. This BJT array is perfect for applications like motor drives, LED lighting, and power management. The PRMH13Z is also widely used in renewable energy solutions, industrial controls, and communication devices. With its high gain and low saturation voltage, it is ideal for precision applications. The compact and rugged design of the PRMH13Z makes it suitable for both commercial and industrial use. Engineers seeking a high-performance transistor array will find the PRMH13Z to be an excellent solution. Submit your inquiry today to receive detailed information on pricing and availability tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Power - Max: 480mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1412-6
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