2N6052
NTE Electronics, Inc

NTE Electronics, Inc
TRANS PNP DARL 100V 12A TO204
$4.00
Available to order
Reference Price (USD)
1+
$6.93000
20+
$6.23700
40+
$5.68250
100+
$5.12820
260+
$4.71238
500+
$4.29660
1,000+
$3.74220
2,500+
$3.69600
Exquisite packaging
Discount
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Product details
The 2N6052 from NTE Electronics, Inc is a premium-grade Bipolar Junction Transistor designed for demanding Discrete Semiconductor Products applications. This single BJT combines high current capability with fast switching characteristics for versatile circuit implementation. Its advanced epitaxial base structure ensures uniform current distribution and thermal management. The transistor exhibits low saturation voltage, reducing power dissipation in switching applications. Engineers value the 2N6052 for its tight parameter tolerances and batch-to-batch consistency. Typical circuit implementations include class AB amplifiers, electronic switches, and voltage-controlled oscillators. Automotive electronics, power tools, and industrial control systems commonly utilize this reliable component. The 2N6052 meets stringent quality standards with comprehensive production testing and failure analysis. Its moisture sensitivity level (MSL) rating accommodates standard manufacturing processes. NTE Electronics, Inc supports the 2N6052 with detailed application notes and SPICE models for design simulation. For volume pricing, lead time information, or technical consultation, please submit your inquiry through our responsive online system.
General specs
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Power - Max: 150 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)