NTE102A
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 1A TO1
$8.83
Available to order
Reference Price (USD)
1+
$8.83000
500+
$8.7417
1000+
$8.6534
1500+
$8.5651
2000+
$8.4768
2500+
$8.3885
Exquisite packaging
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NTE102A
$8.83
Product details
Optimize your circuit performance with the NTE102A, a precision Bipolar Junction Transistor from NTE Electronics, Inc. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The NTE102A exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. NTE Electronics, Inc employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The NTE102A combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: 170mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 25µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 69 @ 300mA, 0V
- Power - Max: 650 mW
- Frequency - Transition: -
- Operating Temperature: 90°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-1-3 Metal Can
- Supplier Device Package: TO-1
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