Shopping cart

Subtotal: $0.00

NTE185MCP

NTE Electronics, Inc
NTE185MCP Preview
NTE Electronics, Inc
TRANS PNP 80V 4A TO126
$5.47
Available to order
Reference Price (USD)
1+
$5.47000
500+
$5.4153
1000+
$5.3606
1500+
$5.3059
2000+
$5.2512
2500+
$5.1965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

NTE Electronics, Inc NTE185MCP is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NTE185MCP

NTE185MCP

$5.47

Product details

Discover the NTE185MCP, a high-efficiency Bipolar Junction Transistor from NTE Electronics, Inc designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The NTE185MCP demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the NTE185MCP simplifies circuit design challenges. NTE Electronics, Inc's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
  • Power - Max: 40 W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126

Viewed products

Rohm Semiconductor

2SAR340PT100Q

$0.00 (not set)
onsemi

CPH5514-TL-E

$0.00 (not set)
Central Semiconductor Corp

2N4424 PBFREE

$0.00 (not set)
Panjit International Inc.

MMBT5551_R1_00001

$0.00 (not set)
Diodes Incorporated

BC857BFA-7B

$0.00 (not set)
onsemi

D44VH10G

$0.00 (not set)
onsemi

NJVMJD44H11RLG-VF01

$0.00 (not set)
Microchip Technology

2N336A

$0.00 (not set)
Nexperia USA Inc.

BC856B,235

$0.00 (not set)
NTE Electronics, Inc

MJ10016

$0.00 (not set)
Top