Shopping cart

Subtotal: $0.00

NTE2541

NTE Electronics, Inc
NTE2541 Preview
NTE Electronics, Inc
TRANS NPN DARL 120V 25A TO3P
$5.92
Available to order
Reference Price (USD)
1+
$5.92000
500+
$5.8608
1000+
$5.8016
1500+
$5.7424
2000+
$5.6832
2500+
$5.624
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

NTE Electronics, Inc NTE2541 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NTE2541

NTE2541

$5.92

Product details

Enhance your electronic designs with the NTE2541, a premium Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The NTE2541 features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The NTE2541 is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 25 A
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 24mA, 12A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 12A, 4V
  • Power - Max: 120 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P

Viewed products

Diodes Incorporated

ZXT10N20DE6TA

$0.00 (not set)
Nexperia USA Inc.

BC55-16PA,115

$0.00 (not set)
onsemi

BD436G

$0.00 (not set)
Micro Commercial Co

MMBT2907AT-TP

$0.00 (not set)
onsemi

FSB660A

$0.00 (not set)
Fairchild Semiconductor

2N5210TA

$0.00 (not set)
Infineon Technologies

BFN38E6327HTSA1

$0.00 (not set)
Fairchild Semiconductor

PN5134

$0.00 (not set)
Microchip Technology

JANTXV2N2219AL

$0.00 (not set)
Infineon Technologies

BDP950H6327XTSA1

$0.00 (not set)
Top