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NTE299

NTE Electronics, Inc
NTE299 Preview
NTE Electronics, Inc
RF TRANS NPN 35V TO202
$3.22
Available to order
Reference Price (USD)
1+
$3.22000
500+
$3.1878
1000+
$3.1556
1500+
$3.1234
2000+
$3.0912
2500+
$3.059
Exquisite packaging
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NTE Electronics, Inc NTE299 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NTE299

NTE299

$3.22

Product details

Optimize your RF circuits with the NTE299 BJT transistor from NTE Electronics, Inc, a premium solution in the discrete semiconductor products market. This RF bipolar transistor delivers exceptional linearity and low intermodulation distortion, crucial for high-fidelity signal processing. Its advanced architecture ensures minimal phase noise, making it perfect for precision applications. The device features enhanced thermal management properties and electromagnetic shielding for reliable operation in harsh environments. With its compact form factor, the NTE299 saves valuable board space without compromising performance. Typical implementations include cellular infrastructure equipment where consistent signal amplification is vital. Industrial automation systems benefit from its robustness in motor control and sensor interfaces. For military applications, it provides secure communication links in encrypted transmission systems. The transistor also excels in scientific instrumentation requiring accurate signal measurement. Engineers appreciate its design flexibility for both narrowband and broadband configurations. NTE Electronics, Inc backs this product with rigorous quality testing and long-term reliability assurance. Whether you're upgrading existing equipment or developing next-gen RF solutions, the NTE299 offers the performance edge you need. Visit our website to compare technical specifications or request a sample for evaluation. Let our experts guide you to the ideal transistor solution submit your project requirements now for a customized quotation.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 10V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-202 Long Tab
  • Supplier Device Package: TO-202

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