PN3638A
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 25V 0.8A TO92-3
$0.16
Available to order
Reference Price (USD)
1+
$0.16200
500+
$0.16038
1000+
$0.15876
1500+
$0.15714
2000+
$0.15552
2500+
$0.1539
Exquisite packaging
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PN3638A
$0.16
Product details
Discover the PN3638A, a high-efficiency Bipolar Junction Transistor from NTE Electronics, Inc designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The PN3638A demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the PN3638A simplifies circuit design challenges. NTE Electronics, Inc's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
- Current - Collector Cutoff (Max): 35nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
- Power - Max: 625 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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