A2I25H060NR1
NXP USA Inc.
NXP USA Inc.
IC RF LDMOS AMP
$0.00
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Reference Price (USD)
500+
$60.10998
Exquisite packaging
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A2I25H060NR1
$0.00
Product details
The A2I25H060NR1 from NXP USA Inc. is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The A2I25H060NR1 excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the A2I25H060NR1 perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The A2I25H060NR1 provides reliable and accurate signal processing in all scenarios. NXP USA Inc. has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the A2I25H060NR1 is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the A2I25H060NR1 from NXP USA Inc. for exceptional RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.59GHz
- Gain: 26.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 26 mA
- Power - Output: 10.5W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Flat Leads
- Supplier Device Package: TO-270WB-17
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