A2T27S020NR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$11.25
Available to order
Reference Price (USD)
500+
$18.74662
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A2T27S020NR1
$11.25
Product details
Upgrade your RF systems with the A2T27S020NR1 RF MOSFET transistor from NXP USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The A2T27S020NR1 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the A2T27S020NR1 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The A2T27S020NR1 ensures accurate and stable signal processing in all scenarios. NXP USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the A2T27S020NR1 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the A2T27S020NR1 from NXP USA Inc. for superior RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 400MHz ~ 2.7GHz
- Gain: 21dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 185 mA
- Power - Output: 20W
- Voltage - Rated: 65 V
- Package / Case: TO-270-2
- Supplier Device Package: TO-270-2
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