A2V09H400-04NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$177.28
Available to order
Reference Price (USD)
250+
$104.10576
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
NXP USA Inc. A2V09H400-04NR3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
A2V09H400-04NR3
$177.28
Product details
The A2V09H400-04NR3 by NXP USA Inc. is a premium RF MOSFET transistor designed for the discrete semiconductor products segment. This high-frequency transistor is built to deliver exceptional performance in RF amplification and switching applications. Its advanced FET architecture ensures low noise and high efficiency, making it a preferred choice for sensitive electronic systems. The A2V09H400-04NR3 offers excellent power handling and thermal stability, crucial for prolonged operation. With its high gain and linearity, it is perfect for demanding RF environments. The transistor's compact and durable design facilitates easy integration into various circuit configurations. It is engineered to provide reliable performance in both commercial and industrial settings. Key features include fast switching capabilities, low distortion, and superior impedance matching. These characteristics make the A2V09H400-04NR3 ideal for use in mobile communication devices, RF transceivers, and navigation systems. It is also highly effective in medical imaging equipment, automotive radar, and industrial sensors. The A2V09H400-04NR3 ensures consistent and accurate signal processing across all applications. NXP USA Inc. has designed this MOSFET to meet rigorous quality and performance standards. For engineers looking for a high-performance RF solution, the A2V09H400-04NR3 is a reliable option. Elevate your RF designs with this cutting-edge transistor. To learn more about pricing and specifications, contact us or submit an online inquiry. Choose the A2V09H400-04NR3 from NXP USA Inc. for unparalleled RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 720MHz ~ 960MHz
- Gain: 17.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 688 mA
- Power - Output: 107W
- Voltage - Rated: 105 V
- Package / Case: OM-780-4L
- Supplier Device Package: OM-780-4L
Viewed products
