A3G26D055N-2515
NXP USA Inc.
NXP USA Inc.
RF REFERENCE CIRCUIT 55W 2515MHZ
$282.62
Available to order
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$279.7938
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$276.9676
1500+
$274.1414
2000+
$271.3152
2500+
$268.489
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A3G26D055N-2515
$282.62
Product details
The A3G26D055N-2515 by NXP USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The A3G26D055N-2515 excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the A3G26D055N-2515 perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The A3G26D055N-2515 delivers precise and stable signal processing across all applications. NXP USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the A3G26D055N-2515 is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the A3G26D055N-2515 from NXP USA Inc. for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: GaN
- Frequency: 100MHz ~ 2.69GHz
- Gain: 13.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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