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A3I25D080NR1

NXP USA Inc.
A3I25D080NR1 Preview
NXP USA Inc.
AIRFAST RF LDMOS INTEGRATED POWE
$39.34
Available to order
Reference Price (USD)
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$38.9466
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$38.5532
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$38.1598
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$37.7664
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$37.373
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NXP USA Inc. A3I25D080NR1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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A3I25D080NR1

A3I25D080NR1

$39.34

Product details

The A3I25D080NR1 by NXP USA Inc. is a premium RF MOSFET transistor designed for the discrete semiconductor products segment. This high-frequency transistor is built to deliver exceptional performance in RF amplification and switching applications. Its advanced FET architecture ensures low noise and high efficiency, making it a preferred choice for sensitive electronic systems. The A3I25D080NR1 offers excellent power handling and thermal stability, crucial for prolonged operation. With its high gain and linearity, it is perfect for demanding RF environments. The transistor's compact and durable design facilitates easy integration into various circuit configurations. It is engineered to provide reliable performance in both commercial and industrial settings. Key features include fast switching capabilities, low distortion, and superior impedance matching. These characteristics make the A3I25D080NR1 ideal for use in mobile communication devices, RF transceivers, and navigation systems. It is also highly effective in medical imaging equipment, automotive radar, and industrial sensors. The A3I25D080NR1 ensures consistent and accurate signal processing across all applications. NXP USA Inc. has designed this MOSFET to meet rigorous quality and performance standards. For engineers looking for a high-performance RF solution, the A3I25D080NR1 is a reliable option. Elevate your RF designs with this cutting-edge transistor. To learn more about pricing and specifications, contact us or submit an online inquiry. Choose the A3I25D080NR1 from NXP USA Inc. for unparalleled RF performance.

General specs

  • Product Status: Active
  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz ~ 2.69GHz
  • Gain: 29.2dB
  • Voltage - Test: 28 V
  • Current Rating (Amps): 10µA
  • Noise Figure: -
  • Current - Test: 175 mA
  • Power - Output: 8.3W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270-17 Variant, Flat Leads
  • Supplier Device Package: TO-270WB-17

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