A3T18H360W23SR6
NXP USA Inc.
NXP USA Inc.
1.8GHZ 360W ACP1230S-4L2
$153.52
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Reference Price (USD)
150+
$94.90413
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A3T18H360W23SR6
$153.52
Product details
The A3T18H360W23SR6 from NXP USA Inc. is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The A3T18H360W23SR6 excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the A3T18H360W23SR6 perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The A3T18H360W23SR6 offers reliable and accurate signal processing in all applications. NXP USA Inc. has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the A3T18H360W23SR6 is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the A3T18H360W23SR6 from NXP USA Inc. for exceptional RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 1.8GHz ~ 1.88GHz
- Gain: 16.6dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 700 mA
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: ACP-1230S-4L2S
- Supplier Device Package: ACP-1230S-4L2S
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