A3T18H455W23SR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$179.70
Available to order
Reference Price (USD)
150+
$122.24033
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
NXP USA Inc. A3T18H455W23SR6 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
A3T18H455W23SR6
$179.70
Product details
Maximize your RF capabilities with the A3T18H455W23SR6 RF MOSFET transistor from NXP USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The A3T18H455W23SR6 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The A3T18H455W23SR6 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The A3T18H455W23SR6 ensures consistent operation across a wide frequency range. NXP USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the A3T18H455W23SR6 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the A3T18H455W23SR6 from NXP USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 16.7dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 192W
- Voltage - Rated: 65 V
- Package / Case: ACP-1230S-4L2S
- Supplier Device Package: ACP-1230S-4L2S
Viewed products