A5G35H110N-3400
NXP USA Inc.
NXP USA Inc.
A5G35H110N 3400-3600 MHZ REFEREN
$492.19
Available to order
Reference Price (USD)
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$492.19000
500+
$487.2681
1000+
$482.3462
1500+
$477.4243
2000+
$472.5024
2500+
$467.5805
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A5G35H110N-3400
$492.19
Product details
Maximize your RF capabilities with the A5G35H110N-3400 RF MOSFET transistor from NXP USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The A5G35H110N-3400 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The A5G35H110N-3400 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The A5G35H110N-3400 ensures consistent operation across a wide frequency range. NXP USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the A5G35H110N-3400 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the A5G35H110N-3400 from NXP USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: -
- Frequency: 3.3GHz ~ 3.7GHz
- Gain: 15.3dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 70 mA
- Power - Output: 15.1W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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