BF1201WR,115
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
$0.18
Available to order
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BF1201WR,115
$0.18
Product details
Upgrade your RF systems with the BF1201WR,115 RF MOSFET transistor from NXP USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The BF1201WR,115 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the BF1201WR,115 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The BF1201WR,115 ensures accurate and stable signal processing in all scenarios. NXP USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the BF1201WR,115 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the BF1201WR,115 from NXP USA Inc. for superior RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 29dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 1dB
- Current - Test: 15 mA
- Power - Output: -
- Voltage - Rated: 10 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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