MRF6S18060NR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 1.99GHZ TO270-4
$67.91
Available to order
Reference Price (USD)
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$67.91000
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$67.2309
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$66.5518
1500+
$65.8727
2000+
$65.1936
2500+
$64.5145
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MRF6S18060NR1
$67.91
Product details
Upgrade your RF systems with the MRF6S18060NR1 RF MOSFET transistor from NXP USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The MRF6S18060NR1 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the MRF6S18060NR1 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The MRF6S18060NR1 ensures accurate and stable signal processing in all scenarios. NXP USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the MRF6S18060NR1 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the MRF6S18060NR1 from NXP USA Inc. for superior RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 15dB
- Voltage - Test: 26 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 60W
- Voltage - Rated: 68 V
- Package / Case: TO-270AB
- Supplier Device Package: TO-270 WB-4
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