MRF6VP121KHR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 110V 1.03GHZ NI-1230
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MRF6VP121KHR6
$0.00
Product details
The MRF6VP121KHR6 by NXP USA Inc. is a premium RF MOSFET transistor designed for the discrete semiconductor products segment. This high-frequency transistor is built to deliver exceptional performance in RF amplification and switching applications. Its advanced FET architecture ensures low noise and high efficiency, making it a preferred choice for sensitive electronic systems. The MRF6VP121KHR6 offers excellent power handling and thermal stability, crucial for prolonged operation. With its high gain and linearity, it is perfect for demanding RF environments. The transistor's compact and durable design facilitates easy integration into various circuit configurations. It is engineered to provide reliable performance in both commercial and industrial settings. Key features include fast switching capabilities, low distortion, and superior impedance matching. These characteristics make the MRF6VP121KHR6 ideal for use in mobile communication devices, RF transceivers, and navigation systems. It is also highly effective in medical imaging equipment, automotive radar, and industrial sensors. The MRF6VP121KHR6 ensures consistent and accurate signal processing across all applications. NXP USA Inc. has designed this MOSFET to meet rigorous quality and performance standards. For engineers looking for a high-performance RF solution, the MRF6VP121KHR6 is a reliable option. Elevate your RF designs with this cutting-edge transistor. To learn more about pricing and specifications, contact us or submit an online inquiry. Choose the MRF6VP121KHR6 from NXP USA Inc. for unparalleled RF performance.
General specs
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS (Dual)
- Frequency: 1.03GHz
- Gain: 20dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 1000W
- Voltage - Rated: 110 V
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
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