MRF7S18125AHR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.88GHZ NI780
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MRF7S18125AHR3
$0.00
Product details
The MRF7S18125AHR3 from NXP USA Inc. is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The MRF7S18125AHR3 excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the MRF7S18125AHR3 perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The MRF7S18125AHR3 offers reliable and accurate signal processing in all applications. NXP USA Inc. has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the MRF7S18125AHR3 is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the MRF7S18125AHR3 from NXP USA Inc. for exceptional RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.88GHz
- Gain: 17dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.1 A
- Power - Output: 125W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
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