MRFE6VP8600HSR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
$0.00
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Reference Price (USD)
50+
$253.88380
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MRFE6VP8600HSR5
$0.00
Product details
Upgrade your RF systems with the MRFE6VP8600HSR5 RF MOSFET transistor from NXP USA Inc., a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The MRFE6VP8600HSR5 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the MRFE6VP8600HSR5 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The MRFE6VP8600HSR5 ensures accurate and stable signal processing in all scenarios. NXP USA Inc. has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the MRFE6VP8600HSR5 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the MRFE6VP8600HSR5 from NXP USA Inc. for superior RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 860MHz
- Gain: 19.3dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 125W
- Voltage - Rated: 130 V
- Package / Case: NI-1230S
- Supplier Device Package: NI-1230S
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