MRFG35003N6AT1
NXP USA Inc.
NXP USA Inc.
FET RF 8V 3.55GHZ PLD-1.5
$20.54
Available to order
Reference Price (USD)
1,000+
$8.27473
Exquisite packaging
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MRFG35003N6AT1
$20.54
Product details
Maximize your RF capabilities with the MRFG35003N6AT1 RF MOSFET transistor from NXP USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The MRFG35003N6AT1 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The MRFG35003N6AT1 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The MRFG35003N6AT1 ensures consistent operation across a wide frequency range. NXP USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the MRFG35003N6AT1 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the MRFG35003N6AT1 from NXP USA Inc. for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 10dB
- Voltage - Test: 6 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 180 mA
- Power - Output: 450mW
- Voltage - Rated: 8 V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
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