Shopping cart

Subtotal: $0.00

PHD108NQ03LT,118

NXP USA Inc.
PHD108NQ03LT,118 Preview
NXP USA Inc.
MOSFET N-CH 25V 75A DPAK
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

NXP USA Inc. PHD108NQ03LT,118 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PHD108NQ03LT,118

PHD108NQ03LT,118

$0.31

Product details

NXP USA Inc. presents the PHD108NQ03LT,118, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The PHD108NQ03LT,118 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The PHD108NQ03LT,118 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

onsemi

NTD4865N-1G

$0.00 (not set)
Nexperia USA Inc.

BSH103,215

$0.00 (not set)
Rectron USA

RM30N250DF

$0.00 (not set)
Infineon Technologies

IRF6727MTRPBF

$0.00 (not set)
STMicroelectronics

STP20NM50FD

$0.00 (not set)
Infineon Technologies

BSC882N03LSGATMA1

$0.00 (not set)
Diodes Incorporated

DMN3028L-7

$0.00 (not set)
UnitedSiC

UJ4C075044B7S

$0.00 (not set)
Diodes Incorporated

ZXMP7A17GQTA

$0.00 (not set)
Vishay Siliconix

SI4413DDY-T1-GE3

$0.00 (not set)
Top