SA2T18H450W19SR6
NXP Semiconductors
NXP Semiconductors
A2T18H450 - AIRFAST RF POWER LDM
$197.60
Available to order
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$193.648
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$191.672
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$189.696
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$187.72
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SA2T18H450W19SR6
$197.60
Product details
Enhance your RF circuitry with the SA2T18H450W19SR6 RF MOSFET transistor from NXP Semiconductors, a standout in the discrete semiconductor products market. This transistor is specifically designed for high-frequency applications, offering unmatched performance and reliability. The SA2T18H450W19SR6 features advanced FET technology that ensures low noise and high gain, critical for sensitive RF systems. Its efficient power handling capabilities make it suitable for both transmitting and receiving applications. The transistor's robust design guarantees long-term stability and durability. With excellent thermal characteristics, the SA2T18H450W19SR6 maintains performance even under continuous operation. Its compact form factor allows for seamless integration into space-constrained designs. The SA2T18H450W19SR6 is perfect for applications requiring precise signal amplification and control. Key benefits include superior switching speed, minimal signal loss, and high impedance matching. These features make it ideal for use in telecommunications infrastructure, satellite communication systems, and military-grade electronics. Additionally, it is well-suited for IoT devices, test and measurement equipment, and aerospace applications. The SA2T18H450W19SR6 delivers consistent results across diverse operating environments. Engineers can rely on its precision and efficiency for critical RF tasks. NXP Semiconductors has engineered this MOSFET to meet the highest industry standards. For projects demanding top-tier RF performance, the SA2T18H450W19SR6 is an excellent choice. Don't miss the opportunity to incorporate this high-quality transistor into your designs. Visit our website to request a quote or submit an inquiry today. Experience the difference with the SA2T18H450W19SR6 from NXP Semiconductors.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 16.6dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 89W
- Voltage - Rated: 65 V
- Package / Case: NI-1230S-4S4S
- Supplier Device Package: NI-1230S-4S4S
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