2SB1203S-TL-H
onsemi
onsemi
TRANS PNP 50V 5A TP-FA
$0.37
Available to order
Reference Price (USD)
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$0.37000
500+
$0.3663
1000+
$0.3626
1500+
$0.3589
2000+
$0.3552
2500+
$0.3515
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2SB1203S-TL-H
$0.37
Product details
The 2SB1203S-TL-H from onsemi represents advanced Bipolar Junction Transistor technology in the Discrete Semiconductor Products category. This single BJT solution provides superior current amplification with minimal power loss, making it ideal for energy-sensitive designs. The transistor's optimized geometry reduces parasitic effects that can compromise circuit performance. Engineers value its predictable characteristics and tight parameter distribution across production lots. The 2SB1203S-TL-H excels in both common-emitter and common-base configurations, offering design flexibility. Applications span from small-signal processing in consumer electronics to power management in industrial systems. Electric vehicle components, smart home devices, and test equipment manufacturers regularly specify this BJT. The device meets international safety and performance certifications, giving designers confidence in their selections. Its compatibility with automated assembly processes streamlines manufacturing workflows. onsemi backs the 2SB1203S-TL-H with comprehensive technical support and reliable supply chain management. To discuss how this transistor can optimize your specific application, please submit your requirements through our online inquiry system.
General specs
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TP-FA
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