2SB1215S-E
onsemi
onsemi
TRANS PNP 100V 3A TP
$1.01
Available to order
Reference Price (USD)
1+
$1.00000
10+
$0.89700
100+
$0.69910
500+
$0.57756
1,000+
$0.45596
Exquisite packaging
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2SB1215S-E
$1.01
Product details
Optimize your circuit performance with the 2SB1215S-E, a precision Bipolar Junction Transistor from onsemi. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The 2SB1215S-E exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. onsemi employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The 2SB1215S-E combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
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