30C01C-TB-E
onsemi
onsemi
BIP NPN 0.4A 30V
$0.05
Available to order
Reference Price (USD)
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$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
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30C01C-TB-E
$0.05
Product details
The 30C01C-TB-E from onsemi is a high-performance RF MOSFET transistor designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency (RF) amplification, offering superior signal clarity and efficiency. Ideal for both low-noise and high-power scenarios, it ensures reliable performance in critical circuits. With its advanced FET technology, the 30C01C-TB-E delivers exceptional gain and stability, making it a top choice for RF designs. Its robust construction guarantees durability even in harsh operating conditions. The 30C01C-TB-E is engineered to minimize power loss while maximizing output, ensuring optimal energy utilization. Whether for commercial or industrial use, this MOSFET transistor stands out for its precision and reliability. Its compact design allows for easy integration into various circuit layouts. The 30C01C-TB-E is a versatile solution for modern electronic systems requiring high-frequency operation. Trust onsemi for cutting-edge semiconductor technology that meets the highest standards. Key features include low distortion, high linearity, and excellent thermal management. These attributes make the 30C01C-TB-E suitable for a wide range of RF applications. Common uses include wireless communication systems, radar equipment, and broadcast transmitters. It is also ideal for medical devices, automotive electronics, and industrial automation systems. The 30C01C-TB-E ensures consistent performance across all these applications. For engineers seeking a dependable RF MOSFET, the 30C01C-TB-E is an outstanding option. Ready to enhance your RF designs with this high-quality transistor? Contact us today for pricing and availability. Submit your inquiry online to get started with the 30C01C-TB-E from onsemi.
General specs
- Product Status: Obsolete
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