30C01M-TL-E
onsemi
onsemi
BIP NPN 0.4A 30V
$0.06
Available to order
Reference Price (USD)
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$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
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30C01M-TL-E
$0.06
Product details
Enhance your RF circuitry with the 30C01M-TL-E RF MOSFET transistor from onsemi, a standout in the discrete semiconductor products market. This transistor is specifically designed for high-frequency applications, offering unmatched performance and reliability. The 30C01M-TL-E features advanced FET technology that ensures low noise and high gain, critical for sensitive RF systems. Its efficient power handling capabilities make it suitable for both transmitting and receiving applications. The transistor's robust design guarantees long-term stability and durability. With excellent thermal characteristics, the 30C01M-TL-E maintains performance even under continuous operation. Its compact form factor allows for seamless integration into space-constrained designs. The 30C01M-TL-E is perfect for applications requiring precise signal amplification and control. Key benefits include superior switching speed, minimal signal loss, and high impedance matching. These features make it ideal for use in telecommunications infrastructure, satellite communication systems, and military-grade electronics. Additionally, it is well-suited for IoT devices, test and measurement equipment, and aerospace applications. The 30C01M-TL-E delivers consistent results across diverse operating environments. Engineers can rely on its precision and efficiency for critical RF tasks. onsemi has engineered this MOSFET to meet the highest industry standards. For projects demanding top-tier RF performance, the 30C01M-TL-E is an excellent choice. Don't miss the opportunity to incorporate this high-quality transistor into your designs. Visit our website to request a quote or submit an inquiry today. Experience the difference with the 30C01M-TL-E from onsemi.
General specs
- Product Status: Obsolete
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