FGA50N100BNTDTU
onsemi
onsemi
IGBT 1000V 50A 156W TO3P
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1+
$4.79000
10+
$4.31500
450+
$3.38956
900+
$3.05760
1,350+
$2.60333
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FGA50N100BNTDTU
$0.00
Product details
Experience unparalleled power control with the FGA50N100BNTDTU single IGBT transistor by onsemi. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The FGA50N100BNTDTU boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the FGA50N100BNTDTU offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
- Power - Max: 156 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 275 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.5 µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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