FGAF30S65AQ
onsemi
onsemi
IGBT 650V 30A TO-3PF
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FGAF30S65AQ
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Product details
Experience unparalleled power control with the FGAF30S65AQ single IGBT transistor by onsemi. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The FGAF30S65AQ boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the FGAF30S65AQ offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 83 W
- Switching Energy: 515µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 18ns/92ns
- Test Condition: 400V, 15A, 13Ohm, 15V
- Reverse Recovery Time (trr): 267 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF-3
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