HGTG18N120BND
onsemi
onsemi
IGBT 1200V 54A 390W TO247
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1+
$6.74000
10+
$6.07800
450+
$4.77169
900+
$4.30333
1,350+
$3.66241
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HGTG18N120BND
$0.00
Product details
Experience unparalleled power control with the HGTG18N120BND single IGBT transistor by onsemi. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The HGTG18N120BND boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the HGTG18N120BND offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
- Power - Max: 390 W
- Switching Energy: 1.9mJ (on), 1.8mJ (off)
- Input Type: Standard
- Gate Charge: 165 nC
- Td (on/off) @ 25°C: 23ns/170ns
- Test Condition: 960V, 18A, 3Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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