HGTG30N60A4
onsemi
onsemi
IGBT 600V 75A TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$7.11000
10+
$6.44200
450+
$5.14520
900+
$4.71299
1,350+
$4.13673
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HGTG30N60A4
$0.00
Product details
The HGTG30N60A4 from onsemi is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the HGTG30N60A4 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the HGTG30N60A4 for your applications request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
- Power - Max: 463 W
- Switching Energy: 280µJ (on), 240µJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: 25ns/150ns
- Test Condition: 390V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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