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HGTP12N60C3

onsemi
HGTP12N60C3 Preview
onsemi
IGBT 600V 24A 104W TO220AB
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HGTP12N60C3

HGTP12N60C3

$0.00

Product details

Upgrade your power electronics with the HGTP12N60C3 single IGBT transistor from onsemi. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The HGTP12N60C3 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the HGTP12N60C3 delivers consistent performance. Contact us today for more details and pricing information.

General specs

  • Product Status: Obsolete
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 24 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
  • Power - Max: 104 W
  • Switching Energy: 380µJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3

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