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MJ11029G

onsemi
MJ11029G Preview
onsemi
POWER BIPOLAR TRANSISTOR, 50A, 6
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

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MJ11029G

MJ11029G

$2.40

Product details

The MJ11029G from onsemi represents advanced Bipolar Junction Transistor technology in the Discrete Semiconductor Products category. This single BJT solution provides superior current amplification with minimal power loss, making it ideal for energy-sensitive designs. The transistor's optimized geometry reduces parasitic effects that can compromise circuit performance. Engineers value its predictable characteristics and tight parameter distribution across production lots. The MJ11029G excels in both common-emitter and common-base configurations, offering design flexibility. Applications span from small-signal processing in consumer electronics to power management in industrial systems. Electric vehicle components, smart home devices, and test equipment manufacturers regularly specify this BJT. The device meets international safety and performance certifications, giving designers confidence in their selections. Its compatibility with automated assembly processes streamlines manufacturing workflows. onsemi backs the MJ11029G with comprehensive technical support and reliable supply chain management. To discuss how this transistor can optimize your specific application, please submit your requirements through our online inquiry system.

General specs

  • Product Status: Active
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -

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