MJE350G
onsemi
onsemi
TRANS PNP 300V 0.5A TO126
$0.78
Available to order
Reference Price (USD)
1+
$0.61000
10+
$0.54600
100+
$0.42180
500+
$0.33638
1,000+
$0.27187
Exquisite packaging
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MJE350G
$0.78
Product details
Enhance your electronic designs with the MJE350G, a premium Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The MJE350G features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The MJE350G is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 20 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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