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MJH11021G

onsemi
MJH11021G Preview
onsemi
TRANS PNP DARL 250V 15A TO247-3
$5.98
Available to order
Reference Price (USD)
1+
$4.49000
30+
$3.83467
120+
$3.34133
510+
$2.86441
1,020+
$2.43685
Exquisite packaging
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MJH11021G

MJH11021G

$5.98

Product details

The MJH11021G by onsemi sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The MJH11021G commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. onsemi's commitment to innovation is evident in the MJH11021G's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.

General specs

  • Product Status: Active
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
  • Power - Max: 150 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3

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