MMBT5088LT1G
onsemi
onsemi
TRANS NPN 30V 0.05A SOT23-3
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03460
6,000+
$0.03131
15,000+
$0.02738
30,000+
$0.02475
75,000+
$0.02213
150,000+
$0.01863
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MMBT5088LT1G
$0.21
Product details
Optimize your circuit performance with the MMBT5088LT1G, a precision Bipolar Junction Transistor from onsemi. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The MMBT5088LT1G exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. onsemi employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The MMBT5088LT1G combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
- Power - Max: 300 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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