MT9M131C12STC-MI-DR
onsemi
onsemi
CMOS IMAGE SENSOR SYSTEM-ON-CHIP
$14.63
Available to order
Reference Price (USD)
1+
$14.63000
500+
$14.4837
1000+
$14.3374
1500+
$14.1911
2000+
$14.0448
2500+
$13.8985
Exquisite packaging
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onsemi MT9M131C12STC-MI-DR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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MT9M131C12STC-MI-DR
$14.63
Product details
The MT9M131C12STC-MI-DR from onsemi is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the MT9M131C12STC-MI-DR provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The MT9M131C12STC-MI-DR finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the MT9M131C12STC-MI-DR and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!
General specs
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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