NGTB25N120IHLWG
onsemi
onsemi
IGBT 1200V 50A TO247
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Available to order
Reference Price (USD)
1+
$3.16000
30+
$2.69767
120+
$2.35125
510+
$2.01629
1,020+
$1.71600
Exquisite packaging
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NGTB25N120IHLWG
$0.00
Product details
Maximize power efficiency with the NGTB25N120IHLWG single IGBT transistor by onsemi. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The NGTB25N120IHLWG features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the NGTB25N120IHLWG delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
- Power - Max: 192 W
- Switching Energy: 800µJ (off)
- Input Type: Standard
- Gate Charge: 200 nC
- Td (on/off) @ 25°C: -/235ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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