NGTB30N135IHR1WG
onsemi
onsemi
IGBT 1350V 30A TO247
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Available to order
Reference Price (USD)
1+
$5.01000
30+
$4.25267
120+
$3.68550
510+
$3.13739
1,020+
$2.64600
Exquisite packaging
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NGTB30N135IHR1WG
$0.00
Product details
The NGTB30N135IHR1WG from onsemi is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the NGTB30N135IHR1WG ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the NGTB30N135IHR1WG for your next project request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A
- Power - Max: 394 W
- Switching Energy: 630µA (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: -/200ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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