NGTB40N120FL2WG
onsemi

onsemi
IGBT TRENCH/FS 1200V 80A TO247
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Reference Price (USD)
1+
$5.75000
30+
$4.90500
120+
$4.27500
510+
$3.66600
1,020+
$3.12000
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Product details
The NGTB40N120FL2WG from onsemi is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the NGTB40N120FL2WG ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the NGTB40N120FL2WG and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 535 W
- Switching Energy: 3.4mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 313 nC
- Td (on/off) @ 25°C: 116ns/286ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 240 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247